CNRS Research Scientist
Tel : +33 5 34 32 24 00
email
Adresse postale :
LAPLACE – LAboratoire PLAsma et Conversion d’Energie
INP-ENSEEIHT
2, rue Charles Camichel
BP 7122
31071 Toulouse Cedex 7
Groupe de recherche Convertisseur Statique
Biographie/ Biography
N. Rouger received the B.Eng. degree from Universite Paris Sud, Orsay, and Ecole Normale Superieure de Cachan, France (2003). He received the M.Eng. degree (2005) and PhD degree (2008) in electrical engineering from the Institut National Polytechnique de Grenoble, France. He was a post-doctoral researcher in the MiNa Group at the University of British Columbia (UBC, 2008–2009), where he contributed to the modelling, design and characterization of SOI nanophotonics devices. He was a research scientist at the French National Centre for Scientific Research (CNRS) and the Grenoble Electrical Engineering Lab (G2Elab, 2009-2016). Since 2017, he joined the static converter group of Laplace laboratory in Toulouse, as a CNRS research scientist. His main interests are integration for power transistors and power ICs, wide bandgap power semiconductor devices and optical control of novel smart power semiconductor devices.
Thèmes de recherche/Research Themes
• CMOS gate drivers and dedicated ICs for Silicon and Wide Bandgap power devices
• Design and characterization of Diamond power semiconductor devices and Diamond based power converters
International, national, local responsabilities and key experiences
• Technical Program Committee Member for the IEEE International Symposium on Power Semiconductor and ICs (ISPSD), track IC Design,
• Co-founder of the DRIVER task force, for the French national SEEDS research network on electrical engineering,
• Track and Session chairman for various international and national conferences on power electronics, power devices and ICs (NDNC 2017, MRS 2016, CIPS2012, SGE 2014, EPF2012),
• Coordinator of two national research projects (ANR Diamond HVDC 2017-2021, ANR SiPowLight 2010-2014) and Work Package Leader for H2020 Low Carbon Energy European Commission program (#GreenDiamond project 2015-2019)
• PhD director or PhD advisor of 14 PhD students (incl. 11 already defended)
• +800 hours of lectures and labs for undergraduate and graduate studies,
• Reviewer for international journals and conferences on power electronics, power devices and ICs (IEEE Transactions on Power Electronics, Nature Scientific Report, Diamond and Related Materials, IEEE Transactions on Electron Devices, IEEE ECCE, IEEE ISIE, IEEE APEC, IEEE ISPSD, …),
• Expert for the French ANR Research Agency,
• Expert for the French Ministry of Higher Education and Research,
• Author or co-author of +160 scientific articles and communications in power electronics, applied physics and electrical engineering.
Publications
Since 2016
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Nicolas Rouger, A. Maréchal,
Design of Diamond Power Devices : Application to Schottky Barrier DiodesPages : 2387 - Periodique : Energies - Volume : 12 - N°: 12Link : https://doi.org/10.3390/en12122387 -
Plinio Bau, Marc Cousineau, Bernardo Cougo, Frédéric Richardeau, Sébastien Vinnac, Didier Flumian, Nicolas Rouger,
Sub-nanosecond delay CMOS Active Gate Driver for Closed-Loop dv/dt Control of GaN Transistors Link : http://www.ispsd2019.com/dct/page/1 -
S. Lefebvre, B. Multon, Nicolas Rouger,
Caractéristiques des composants à semi-conducteur de puissance en vue de leur commandePages : D3231-v2 - Periodique : Techniques de l'IngénieurLink : https://www.techniques-ingenieur.fr/base-documentaire/energies-th4/composants-actifs-en-electronique-de-puissance-42245210/caracteristiques-des-composants-a-semi-conducteur-de-puissance-en-vue-de-leur-commande-d3231/ -
S. Lefebvre, B. Multon, Nicolas Rouger,
Composants bipolaires (thyristors, triacs, GTO, GCT et BJT) : circuits de commandePages : D3232-v2 - Periodique : Techniques de l'IngénieurLink : https://www.techniques-ingenieur.fr/base-documentaire/energies-th4/composants-actifs-en-electronique-de-puissance-42245210/composants-bipolaires-thyristors-triacs-gto-gct-et-bjt-circuits-de-commande-d3232/ -
T. -T. Pham, A. Maréchal, P. Muret, D. Eon, E. Gheeraert, Nicolas Rouger, J. Pernot,
Comprehensive electrical analysis of metal/Al2O3/O-terminated diamond capacitance : 29th International Conference on Defects in Semiconductors (ICDS), July 31-Aug. 04, 2017, Matsue (JAPAN)Pages : 161523 - Periodique : AIP : Journal of Applied Physics - Volume : 123 - N°: 16Link : https://doi.org/10.1063/1.4996114 -
T. -T. Pham, M. Gutierrez, C. Masante, Nicolas Rouger, D. Eon, E. Gheeraert, D. Araujo, J. Pernot,
High quality Al2O3/(100) oxygen-terminated diamond interface for MOSFETs fabricationPages : 102103 - Periodique : Applied Physics Letters - Volume : 112 - N°: 10Link : https://doi.org/10.1063/1.5018403 -
T. -T. Pham, J. C. Pinero, A. Maréchal, M. Gutierrez, F. Lloret, D. Eon, E. Gheeraert, Nicolas Rouger, D. Araujo, J. Pernot,
Impact of Nonhomoepitaxial Defects in Depleted Diamond MOS CapacitorsPages : 1830-1837 - Periodique : IEEE Transactions on Electron Devices - Volume : 65 - N°: 5Link : https://doi.org/10.1109/TED.2018.2813084 -
Marc Cousineau, Nicolas Rouger, J. C. Crebier, A. Bourennane, Frédéric Richardeau,
CMOS circuits and monolithic integration for power semiconductor devices Link : https://www.european-mrs.com/meetings/2018-fall-meeting -
T. -T. Pham, Nicolas Rouger, C. Masante, G. Chicot, F. Udrea, D. Eon, E. Gheeraert, J. Pernot,
Deep depletion concept for diamond MOSFET -
C. Masante, T. -T. Pham, Nicolas Rouger, G. Chicot, F. Udrea, D. Eon, E. Gheeraert, D. Araujo, J. Pernot,
Recent progresses in deep depletion diamond MOSFET Link : https://mrsfall2018.zerista.com/event/member/532559 -
Plinio Bau, Marc Cousineau, B. Cougo, Frédéric Richardeau, D. Colin, Nicolas Rouger,
A CMOS gate driver with ultra-fast dV/dt embedded control dedicated to optimum EMI and turn-on losses management for GaN power transistorsPages : 105-108Link : https://doi.org/10.1109/PRIME.2018.8430331 -
A. Galmiche, Laurent Féral, V. Fabbro, S. Rougerie, D. Serant,
Comparison of Theoritical Scintillation Spectra with Equatorial GNSS DataPages : 4 p.Link : https://doi.org/10.1049/cp.2018.0577 -
C. Masante, J. Pernot, J. Letellier, D. Eon, Nicolas Rouger,
Diamond deep depletion metal oxide semiconductor field effect transistor (D3MOSFET) for power electronics -
G. Perez, J. Letellier, A. Maréchal, D. Eon, G. Chicot, P. -O. Jeannin, Nicolas Rouger, J. -L. Schanen,
Diamond Schottky barrier diodes for power electronics applicationsPages : 1956-1963Link : https://hal.archives-ouvertes.fr/hal-01885530 -
G. Perez, J. Letellier, A. Maréchal, D. Eon, G. Chicot, P. -O. Jeannin, Nicolas Rouger,
Diodes Schottky en Diamant : augmentation du calibre en courant et Parallélisation Link : https://sge2018.sciencesconf.org/ -
C. Masante, F. Donatini, Nicolas Rouger, J. Pernot,
Doping Level Determination of HPHT Diamond Substrate Using Electron Beam Induced Current Link : https://mrsfall2018.zerista.com/event/member/533343 -
J. C. Crebier, V. S. Nguyen, P. Lefranc, Nicolas Rouger, R. Grezaud, F. Ayel, X. Saboret, P. E. Latimier,
Double chips low side-high side configurable full gate driver circuits for a high speed inverter legPages : 1-6Link : https://ieeexplore.ieee.org/document/8403182 -
A. Maréchal, K. Driche, J. Letellier, D. Eon, Nicolas Rouger, E. Gheeraert, H. Umezawa,
Edge termination design for high breakdown voltage diamond Schottky barrier diodes Link : https://www.european-mrs.com/meetings/2018-spring-meeting -
C. Masante, F. Donatini, Nicolas Rouger, J. Pernot,
Electron beam induced current characterization of a HPHT diamond substrate -
C. Masante, J. Pernot, J. Letellier, D. Eon, Nicolas Rouger,
Investigation of the p++ / p interface to lower the contact resistance for power electronic applications -
G. Perez, J. Letellier, A. Maréchal, G. Chicot, D. Eon, Nicolas Rouger,
Monolithic diamond Schottky barrier diodes integration : simulations and experimental realizations -
K. Vladimirova, J. Widiez, B. Letowski, P. Perreau, G. Enyedi, P. Coudrain, Nicolas Rouger, J. C. Crebier,
Solderless Leadframe Assisted Wafer-Level Packaging Technology for Power ElectronicsPages : 1251-1257Link : https://doi.org/10.1109/ECTC.2018.00193 -
C. Masante, K. Driche, T. -T. Pham, H. Umezawa, G. Perez, J. Pernot, Nicolas Rouger, T. Makino, D. Eon, G. Chicot, H. Okumura, E. Gheeraert,
Transistors Haute Tension de type MOSFET et MESFET en diamant pour l'électronique de puissance Link : https://sge2018.sciencesconf.org/ -
Nicolas Rouger,
Diamond devices in power converters : needs, constraints & impactPages : 400-431Link : https://www.elsevier.com/books/power-electronics-device-applications-of-diamond-semiconductors/koizumi/978-0-08-102183-5 -
K. Driche, H. Umezawa, Nicolas Rouger, G. Chicot, E. Gheeraert,
Characterization of breakdown behavior of diamond Schottky barrier diodes using impact ionization coefficientsPeriodique : Japanese Journal of Applied Physics - Volume : 56 - N°: 4SLink : https://doi.org/10.7567/JJAP.56.04CR12 -
T. -T. Pham, Nicolas Rouger, C. Masante, G. Chicot, F. Udrea, D. Eon, E. Gheeraert, J. Pernot,
Deep depletion concept for diamond MOSFETPages : 173503 - Periodique : Applied Physics Letters - Volume : 111 - N°: 17Link : https://hal.archives-ouvertes.fr/hal-01701733 -
T. -T. Pham, J. Pernot, G. Perez, D. Eon, E. Gheeraert, Nicolas Rouger,
Deep-Depletion Mode Boron-Doped Monocrystalline Diamond Metal Oxide Semiconductor Field Effect TransistorPages : 1571-1574 - Periodique : IEEE Electron Device Letters - Volume : 38 - N°: 11Link : https://doi.org/10.1109/LED.2017.2755718 -
G. Perez, G. Chicot, Y. Avenas, P. Lefranc, P. -O. Jeannin, D. Eon, Nicolas Rouger,
Integrated temperature sensor with diamond Schottky diodes using a thermosensitive parameterPages : 83-87 - Periodique : Diamond and Related Materials - Volume : 78Link : https://doi.org/10.1016/j.diamond.2017.08.008 -
Nicolas Rouger, T. -T. Pham, G. Perez, C. Masante, P. Lefranc, P. -O. Jeannin, D. Eon, J. Pernot,
Diamond Devices for Power Electronics Link : https://hal.archives-ouvertes.fr/hal-01590457 -
T. -T. Pham, J. Pernot, C. Masante, D. Eon, E. Gheeraert, G. Chicot, F. Udrea, Nicolas Rouger,
200v, 4mv/cm lateral diamond mosfet Link : https://hal.archives-ouvertes.fr/hal-01701734 -
C. Masante, T. -T. Pham, D. Eon, Nicolas Rouger, J. Pernot,
A comprehensive electrical analysis of pseudo-vertical and lateral diamond metal oxide semiconductor capacitances -
T. -T. Pham, C. Masante, A. Maréchal, D. Eon, E. Gheeraert, Nicolas Rouger, J. Pernot,
Al2o3/o- diamond interface for gate controlled diamond field effect transistor Link : https://www.mrs.org/fall2017 -
T. -T. Pham, C. Masante, P. Muret, A. Maréchal, Nicolas Rouger, D. Eon, E. Gheeraert, J. Pernot,
An improved diamond/al2o3 interface for gate control diamond transistors Link : https://www.uhasselt.be/SBDD -
G. Perez, G. Chicot, Y. Avenas, P. Lefranc, P. -O. Jeannin, D. Eon, Nicolas Rouger,
Caractérisation et mise en oeuvre de composants de puissance en diamant Link : https://isp3d2017.sciencesconf.org/ -
Nicolas Rouger,
Cmos gate drivers for widebandgap power devices : High voltage and high temperature opportunities -
N. Donato, Nicolas Rouger, F. Udrea,
Diamond power devices : State of the art, modelling and figures of merit Link : https://www.mrs.org/fall2017 -
G. Perez, J. Letellier, A. Maréchal, P. -O. Jeannin, P. Lefranc, D. Eon, Nicolas Rouger,
Diamond schottky diodes interactions in power electronics application Link : https://www.mrs.org/fall2017 -
N. Ginot, Nicolas Rouger,
Gt driver Link : https://isp3d2017.sciencesconf.org/ -
J. Letellier, G. Perez, D. Eon, Nicolas Rouger, P. -O. Jeannin, P. Lefranc, E. Gheeraert,
High power diamond schottky diodes including temperature sensor Link : https://www.european-mrs.com/meetings/2017-fall-meeting -
D. Colin, Nicolas Rouger,
High speed digital optical signal transferforpower transistor gate driver applicationsPages : 17059500Link : https://doi.org/10.23919/ISPSD.2017.7988877 -
Nicolas Rouger,
Les évolutions nécessaires des (u) wbg pour l’électronique de puissance Link : http://seeds.cnrs.fr/spip.php?article159 -
G. Chicot, D. Eon, Nicolas Rouger,
Operating temperature as a trade-off parameter for designing drift region of diamond power devices Link : https://hal.archives-ouvertes.fr/hal-01590470 -
G. Chicot, D. Eon, Nicolas Rouger,
Operating temperature consideration in the trade-off for designing drift region of diamond power devices Link : https://hal.archives-ouvertes.fr/hal-01590460 -
G. Perez, P. Lefranc, P. -O. Jeannin, D. Eon, Nicolas Rouger,
Parallel and interleaved structures for diamond schottky diodes Link : https://doi.org/10.23919/EPE17ECCEEurope.2017.8099014 -
A. Galmiche, V. Fabbro, Laurent Féral, S. Rougerie,
Some consequences of the dimensional reduction 3D/2D on the numerical prediction of ionospheric scintillation effects under weak and strong perturbation regimesd Link : http://www.ursi2017.org/ -
J. Pernot, Nicolas Rouger, D. Eon, E. Gheeraert, G. Chicot, T. -T. Pham, F. Udrea,
Diamond mos transistor -
V. Fabbro, Laurent Féral, H. Galiègue, S. Rougerie,
3D to 2D approximation effect on propagation modeling, impact on scintillation indices in polar region Link : https://hal.archives-ouvertes.fr/hal-01353714 -
S. Lefebvre, B. Multon, Nicolas Rouger,
Commande des semi-conducteurs de puissance : contextePages : D3230v2 ; chapitre d'ouvrage -
S. Lefebvre, B. Multon, Nicolas Rouger,
Commande des semi-conducteurs de puissance : principePages : D3231v2 ; chapitre d'ouvrage -
Olivier Goualard (Author), Thierry A. Meynard (Thesis Director),
Utilisation de semi-conducteurs GaN basse tension pour l'intégration des convertisseurs d'énergie électrique dans le domaine aéronautique Link : http://oatao.univ-toulouse.fr/20325/